Nature, Published online: 01 July 2026; doi:10.1038/s41586-026-10707-0
Cross-sectional scanning tunnelling microscopy shows a 2 nm carrier transfer length in bismuth-contacted monolayer MoS2 transistors, defining metal-contact scaling limits for sub-10 nm 2D electronic devices.Directly probing the carrier transfer length in 2D-material transistors
Nature, Published online: 01 July 2026; doi:10.1038/s41586-026-10707-0Cross-sectional scanning tunnelling microscopy shows a 2 nm carrier transfer length in bismuth-contacted monolayer MoS2 transistors, defining metal-contact scaling l…